Self aligned fin-type programmable memory cell

ABSTRACT

A fin-type programmable memory cell includes a bottom electrode electrically coupled to an access device, a top electrode, and an L-shaped memory material element electrically coupled to the bottom and top electrodes. A memory array includes an array of such memory cells, electrically coupled to an array of access devices. Method for making a memory cell, includes: forming a dielectric support layer over a bottom electrode, the dielectric support layer having an upper surface; forming a cavity through the dielectric support layer, exposing a surface of the bottom electrode and defining a dielectric support structure having a sidewall; forming a film of memory material over the dielectric support structure and in the cavity; depositing a dielectric spacer layer over the memory material film; forming a dielectric sidewall spacer from the dielectric spacer layer and a memory material structure having a generally horizontal portion underlying the dielectric sidewall spacer and a generally vertical portion between the dielectric sidewall spacer and the sidewall of the dielectric support structure; forming a dielectric fill; planarizing the dielectric fill to expose upper ends of the vertical portion of the memory material structure; depositing a top electrode material over the planarized dielectric fill; and forming a top electrode from the top electrode material and a memory material element from the memory material structure.

RELATED APPLICATIONS

This application is a divisional of co-pending U.S. patent applicationSer. No. 12/778,897 filed on 12 May 2010, which application isincorporated by reference as if fully set forth herein.

PARTIES TO A JOINT RESEARCH AGREEMENT

International Business Machines Corporation, a New York Corporation, andMacronix International Corporation, Ltd., a Taiwan corporation, areparties to a Joint Research Agreement.

BACKGROUND

This invention relates to high density memory devices based on phasechange memory materials, including chalcogenide based materials and onother programmable resistance materials, and methods for manufacturingsuch devices.

Phase change based memory materials, like chalcogenide based materialsand similar materials, can be caused to change phase between anamorphous state and a crystalline state by application of electricalcurrent at levels suitable for implementation in integrated circuits.The generally amorphous state is characterized by higher electricalresistivity than the generally crystalline state, which can be readilysensed to indicate data. These properties have generated interest inusing programmable resistance material to form nonvolatile memorycircuits, which can be read and written with random access.

The change from the amorphous to the crystalline state is generally alower current operation. The change from crystalline to amorphous,referred to as reset herein, is generally a higher current operation,which includes a short high current density pulse to melt or breakdownthe crystalline structure, after which the phase change material coolsquickly, quenching the molten phase change material and allowing atleast a portion of the phase change material to stabilize in theamorphous state.

The magnitude of the current needed for reset can be reduced by reducingthe size of the phase change material element in the cell and/or thecontact area between electrodes and the phase change material, so thathigher current densities are achieved with small absolute current valuesthrough the phase change material.

The size of the phase change element in a memory cell may be reduced byconfining it to a narrow volume. In one approach to forming a confinedcell structure, a fin-shaped bottom electrode element is formed and thenrecessed to provide a narrow slot into which the phase change materialis deposited. This process presents challenges because it requires thatthe phase change material fill in a very narrow seam. Moreover, theresulting phase change material fin has a limited height, limiting thepower saving performance of the cell.

SUMMARY

In general, the invention features a memory cell having a bottomelectrode electrically coupled to an access device, a top electrode, andan L-shaped memory material element electrically coupled to the bottomand top electrodes.

The L-shaped memory element includes a generally horizontal base portionand an upright portion. The upright (fin-shaped) portion is formed bydepositing a film of memory material onto a sidewall of a broad trench,and it may be formed to as great a height as desired.

In one general aspect the invention features a memory cell, including abottom electrode, a top electrode, and an L-shaped memory materialelement having a generally horizontal base portion and an uprightportion electrically coupled to the bottom and top electrodes. In someembodiments a base portion of the memory material element is in contactwith a contact surface of the bottom electrode. In some embodiments asurface at the upper end of the upright portion of the memory materialelement is in contact with the top electrode; in other embodiments amemory material layer underlies the top electrode, and the surface atthe upper end of the upright portion of the memory material element isin contact with the memory material layer.

The contact surface at the upper end of the upright portion of thememory material structure is generally planar, and lies in a planegenerally parallel to the plane of the contact surface of the bottomelectrode, and transverse to the upright portion of the L-shaped memorymaterial structure.

In some embodiments the memory material element includes a programmableresistance material. In some such embodiments the programmableresistance material includes a phase change memory material, and in somesuch embodiments the phase change memory material includes achalcogenide based material such as a Ge—Sb—Te (“GST”) alloy.

In another general aspect the invention features a memory array havingan array of memory cells including L-shaped memory material elementselectrically coupled to bottom and top electrodes. The bottom electrodesare electrically coupled to an array of access devices, which areelectrically coupled to word lines, and the top electrodes areelectrically coupled to (or constitute) bit lines.

In some embodiments the access devices include transistors; in someembodiments the transistors include field effect transistors (“FET”) andin some embodiments the transistors include bipolar junction transistors(“BJT”); in some embodiments the access devices include diodes; in someembodiments the access devices include BJT devices.

In another general aspect the invention features a method for making amemory cell, by: forming a dielectric support layer over a bottomelectrode, the dielectric support layer having an upper surface; forminga cavity through the dielectric support layer, exposing a surface of thebottom electrode and defining a dielectric support structure having asidewall; forming a film of memory material over the dielectric supportstructure and in the cavity; depositing a dielectric spacer layer overthe memory material film; forming a dielectric sidewall spacer from thedielectric spacer layer and a memory material structure having agenerally horizontal portion underlying the dielectric sidewall spacerand a generally vertical portion between the dielectric sidewall spacerand the sidewall of the dielectric support structure; forming adielectric fill; planarizing the dielectric fill to expose upper ends ofthe vertical portion of the memory material structure; depositing a topelectrode material over the planarized dielectric fill; and forming atop electrode from the top electrode material and a memory materialelement from the memory material structure.

Because the surface of the upper end of the vertical portion of thememory material structure is formed as a result of planarization of thefilled structure, this surface is generally planar, and lies in a planegenerally parallel to the plane of the surface of the bottom electrode,and transverse to the vertical portion of the L-shaped memory materialstructure.

In some embodiments the method further comprises, prior to forming thetop electrode material over the planarized dielectric fill, forming amemory material layer over the planarized dielectric fill.

In some embodiments forming the dielectric support layer includesdepositing a layer of a dielectric material such as an oxide, forexample a silicon oxide, or a thermally insulative material. In someembodiments forming the cavity through the dielectric support layerincludes a patterned etch, such as by a photolithographic technique. Insome embodiments forming the memory material film includes forming afilm of a phase change material such as a GST material, and in some suchembodiments forming the phase change material includes vapor depositionsuch as chemical vapor deposition. In some embodiments depositing thedielectric spacer layer includes depositing a layer of a dielectricmaterial such as an oxide, for example a silicon oxide, or a thermallyinsulative material. In some embodiments forming the dielectric sidewallspacer and forming the memory material structure is carried out instages. In some embodiments forming the dielectric sidewall spacerincludes anisotropically etching the dielectric spacer layer, using adirectional etch such as a directional plasma etch. In some embodimentsforming the memory material structure includes etching portions of thememory material film not covered by the dielectric sidewall spacer. Insome embodiments forming the dielectric fill includes depositing adielectric material such as a nitride (e.g., a silicon nitride) or anoxide (e.g., a silicon oxide), for example. In some embodimentsplanarizing the dielectric fill includes carrying out a chemicalmechanical polish (“CMP”). In some embodiments forming the top electrodeand forming the memory material element include one or more patternedetches, such as by a photolithographic technique.

In another general aspect the invention features a method for making amemory array having an array of memory cells, by: providing an array ofbottom electrodes electrically coupled to an array of access devices,which are electrically coupled to word lines; forming a dielectricsupport layer over the array of bottom electrodes, the dielectricsupport layer having an upper surface; forming a cavity through thedielectric support layer, defining a dielectric support structure havinga sidewall and exposing surfaces of bottom electrodes adjacent thesidewall; forming a film of memory material over the dielectric supportstructure and in the cavity; depositing a dielectric spacer layer overthe memory material film; forming a dielectric sidewall spacer from thedielectric spacer layer and a memory material structure having agenerally horizontal portion underlying the dielectric sidewall spacerand a generally vertical portion between the dielectric sidewall spacerand the sidewall of the dielectric support structure; forming adielectric fill; planarizing the dielectric fill to expose upper ends ofthe vertical portion of the memory material structure; depositing a topelectrode material over the planarized dielectric fill; and forming topelectrodes from the top electrode material and memory material elementsfrom the memory material structure.

The method of the invention for forming the self-aligned memory materialelement does not require deposition of the memory material in a narrowspace. The method is straightforward and can reliably provide a thinfin-shaped memory material element having improved height. In variousembodiments, in the fin-type memory cell of the invention a narrowlyconfined fin-shaped programmable memory material element can provide forreduced reset power requirements and, accordingly, reduced resetcurrent. The cell size can be reduced accordingly, and requirements fordriving the device in the memory array can be relaxed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a diagrammatic sketch in a three-dimensional view showing aphase change memory unit cell according to an embodiment.

FIG. 1B is a diagrammatic sketch in a sectional view showing a phasechange memory unit cell as in FIG. 1A.

FIG. 1C is a diagrammatic sketch in a three-dimensional view showing aphase change memory unit cell according to another embodiment.

FIG. 1D is a diagrammatic sketch in a sectional view showing a phasechange memory unit cell as in FIG. 1C.

FIG. 2A is a diagrammatic sketch in a plan view showing an array offirst electrodes.

FIG. 2B is a diagrammatic sketch in a three-dimensional view showing aportion of an array of first electrodes as in FIG. 2A.

FIGS. 3-12 are diagrammatic sketches in three-dimensional view showingstages in a process for making a phase change memory array according toan embodiment.

FIGS. 13-15 are diagrammatic sketches in three-dimensional view showingstages in a process for making a phase change memory array according toanother embodiment.

FIGS. 16-18 are diagrammatic sketches in three-dimensional view showingphase change memory arrays according to other embodiments.

FIG. 19 is a schematic diagram for a memory array implemented usingmemory cells as described herein.

FIG. 20 is a simplified block diagram of an integrated circuit includingan array of memory cells having a diode access devices and fin-typememory elements as described herein.

FIGS. 21A, 21B, 21C are diagrammatic sketches showing an example of anarray of access devices for use in a memory array according to anembodiment.

FIGS. 22A, 22B are diagrammatic sketches in sectional view showing anexample of an array of access devices for use in a memory arrayaccording to another embodiment.

DETAILED DESCRIPTION

The invention will now be described in further detail by reference tothe drawings, which illustrate alternative embodiments of the invention.The drawings are diagrammatic, showing features of the invention andtheir relation to other features and structures, and are not made toscale. For improved clarity of presentation, in the FIGs. illustratingembodiments of the invention, elements corresponding to elements shownin other drawings are not all particularly renumbered, although they areall readily identifiable in all the FIGs. Also for clarity ofpresentation certain features are not shown in the FIGs., where notnecessary for an understanding of the invention.

FIGS. 1A and 1B show generally at 10 a unit cell according to anembodiment. The cell includes a bottom electrode 12 electrically coupledto an access device 13. The access device is electrically coupled to aword line (“WL”). In the illustrated example the access device is adiode. An L-shaped memory material element overlies the bottom electrode12. The memory material element has an upright portion 17 and a baseportion 15. The base portion 15 in this example is in contact with acontact surface 16 of bottom electrode 12. A narrow surface 18 of theupper end of the upright portion 17 of the L-shaped memory materialelement in this example is in contact with a contact surface of a topelectrode 14. In this example the top electrode constitutes a bit line(“BL”). The current path runs between the bottom electrode 12 and thetop electrode 14 by way of the (fin-shaped) upright portion 17 of thememory element and, accordingly, this programmable resistance memorydevice may be referred a “fin-type” device.

FIGS. 1C and 1D show generally at 11 a unit cell according to anotherembodiment. This cell is similar to that of FIGS. 1A and 1D andadditionally includes a memory material layer 19 interposed between theupright portion 17 of the L-shaped memory material element and the topelectrode 14. As in the embodiment of FIGS. 1A and 1B, the cell includesa bottom electrode 12 electrically coupled to an access device 13,electrically coupled to a word line (“WL”) which, in this example is adiode. An L-shaped memory material element overlying the bottomelectrode 12 has an upright portion 17 and a base portion 15. The baseportion 15 in this example is in contact with a contact surface 16 ofbottom electrode 12. A narrow surface 18 of the upper end of the uprightportion 17 of the L-shaped memory material element in this example is incontact with a contact surface of the memory material layer 19. In thisexample the top electrode constitutes a bit line (“BL”). This device mayalso be referred to as a fin-type device, as the current path runsbetween the bottom electrode 12 and the top electrode 14 by way of the(fin-shaped) upright portion 17 of the memory element and the memorymaterial layer 19. The interposed memory material layer 19 can provideimproved thermal isolation of the cells.

The memory cell structure provides several advantageous features, andFIGS. 1A, 1B, 1C and 1D show. The volume of memory material in thememory element can be very small, having a thickness determined by thethickness of a deposited film of memory material. FIGS. 1B and 1D makereference to various dimensions that may be of interest. Particularly,the thickness (t_(mv)) of the fin-shaped upright portion 17 is verysmall, and the height (h_(m)) of the fin-shaped upright portion 17 islarge. In various embodiments the thickness (t_(mv)) can be as little asabout 1 nm and may be in a range about 1 nm to about 50 nm, usually in arange about 5 nm to about 15 nm, and in particular examples about 8 nm;and in various embodiments the height (h_(m)) can be as little as about10 nm and may be in a range about 10 nm to about 200 nm, usually in arange about 20 nm to about 100 nm, and in particular examples about 50nm. To provide suitable electrical contact, the contact area of thesurface 18 of the upright portion 17 with the upper electrode 14 (or, inother embodiments, with the memory material layer 19) can be as small asabout the square of the minimum feature size (for example, about 25 nm²where the minimum feature size is 5 nm), and may be in a range about 25nm² to about 2500 nm², usually in a range about 100 nm² to about 500nm², and in particular examples about 200 nm². Other dimensions arediscussed in the following description of stages in a method forfabricating a memory cell array according to an embodiment.

FIG. 19 is a schematic illustration of a memory array 190, which can beimplemented using memory cells as described herein. In this example,each memory cell 10 includes a diode access device 198 and a fin-typeprogrammable resistance memory element 196 (represented as a variableresistor) arranged in series along a current path between acorresponding word line 192 and a corresponding bit line 194. Asdescribed in more detail below, the memory element in a given memorycell is programmable to a plurality of resistance states including afirst and a second resistance state.

The array comprises a plurality of word lines 192 including word lines192 a, 192 b, and 192 c extending in parallel in a first direction, anda plurality of bit lines 194 including bit lines 194 a, 194 b, and 194 cextending in parallel in a second direction perpendicular to the firstdirection. The array 190 is referred to as a cross-point array becausethe word lines 192 and bit lines 194 cross each other but do notphysically intersect, and the memory cells 10 are located at thesecross-point locations of the word lines 192 and bit lines 194.

Memory cell 10 is representative of the memory cells of array 190 and isarranged at the cross-point location of the word line ‘192 b and the bitline 194 b, the memory cell 10 including a diode 198 and a memoryelement 196 arranged in series. The diode 198 is electrically coupled tothe word line 192 b and the memory element 196 is electrically coupledto the bit line 194 b.

Reading or writing to memory cell 10 of array 190 can be achieved byapplying appropriate voltage pulses to the corresponding word line 192 band bit line 194 b to induce a current through the selected memory cell10. The level and duration of the voltages applied is dependent upon theoperation performed, e.g., a reading operation or a programmingoperation.

In a read (or sense) operation of the data value stored in the memorycell 10, bias circuitry (see, e.g., biasing arrangement supply voltages,current sources 236 of FIG. 20) coupled to the corresponding word line192 b and bit line 194 b to apply bias arrangements across the memorycell 10 of suitable amplitude and duration to induce current to flowwhich does not result in the memory element 196 undergoing a change inresistive state. The current through the memory cell 10 is dependentupon the resistance of the memory element 196 and, thus, upon the datavalue stored in the memory cell 10. The data value may be determined,for example, by comparison of the current on the bit line 194 b with asuitable reference current by sense amplifiers (see, e.g., senseamplifiers/data in structures 224 of FIG. 20).

In a program operation of a data value to be stored in the memory cell10, bias circuitry (see, e.g., biasing arrangement supply voltages,current sources 236 of FIG. 20) coupled to the corresponding word line192 b and bit line 194 b to apply bias arrangements across the memorycell 10 of suitable amplitude and duration to induce a programmablechange in the memory element 196 to store the data value in the memorycell 10, the electrical resistance of the memory element 196corresponding to the data value stored in the memory cell 10.

The bias arrangements include a first bias arrangement sufficient toforward bias the diode 198 and change the resistance state of the memoryelement 10 from a resistance corresponding to a first programmed stateto a resistance corresponding to a second programmed state. The biasarrangements also include a second bias arrangement sufficient toforward bias the diode 198 and change the resistance state of the memoryelement 10 from a resistance corresponding to the second programmedstate to a resistance corresponding to the first programmed state. Invarious embodiments the bias arrangements for unipolar operation of thememory element 10 may each comprise one or more voltage pulses, and thevoltage levels and pulse times can be determined empirically for eachembodiment.

FIG. 20 is a simplified block diagram of an integrated circuit 201including a cross-point memory array 190 of memory cells. In thisexample, each memory cell includes a diode access device and a fin-typeprogrammable resistance memory element as described herein. A word line(row) decoder 214 is coupled to and in electrical communication with aplurality of word lines 216. A bit line (column) decoder 218 is inelectrical communication with a plurality of bit lines 220 to read datafrom, and write data to, the memory cells (not shown) in array 190.Addresses are supplied on bus 222 to word line decoder and drivers 214and bit line decoder 218. Sense amplifiers and data-in structures inblock 224 are coupled to bit line decoder 218 via data bus 226. Data aresupplied via a data-in line 228 from input/output ports on integratedcircuit 201, or from other data sources internal or external tointegrated circuit 201, to data-in structures in block 224. Othercircuitry 230 may be included on integrated circuit 201, such as ageneral purpose processor or special purpose application circuitry, or acombination of modules providing system-on-a-chip functionalitysupported by array 190. Data are supplied via a data-out line 232 fromthe sense amplifiers in block 224 to input/output ports on integratedcircuit 201, or to other data destinations internal or external tointegrated circuit 201.

A controller 234 implemented in this example, using a bias arrangementstate machine, controls the application of bias arrangement supplyvoltages 236, such as read, program, and program verify voltages.Controller 234 may be implemented using special-purpose logic circuitryas known in the art. In alternative embodiments, controller 234comprises a general-purpose processor, which may be implemented on thesame integrated circuit to execute a computer program to control theoperations of the device. In yet other embodiments, a combination ofspecial-purpose logic circuitry and a general-purpose processor may beutilized for implementation of controller 234.

Embodiments of the programmable resistance material of the memorymaterial element include phase change based memory materials, includingchalcogenide based materials and other materials. Chalcogens include anyof the four elements oxygen (O), sulfur (S), selenium (Se), andtellurium (Te), forming part of group VIA of the periodic table.Chalcogenides comprise compounds of a chalcogen with a moreelectropositive element or radical. Chalcogenide alloys comprisecombinations of chalcogenides with other materials such as transitionmetals. A chalcogenide alloy usually contains one or more elements fromgroup IVA of the periodic table of elements, such as germanium (Ge) andtin (Sn). Often, chalcogenide alloys include combinations including oneor more of antimony (Sb), gallium (Ga), indium (In), and silver (Ag).Many phase change based memory materials have been described intechnical literature, including alloys of: Ga/Sb, In/Sb, In/Se, Sb/Te,Ge/Te, Ge/Sb/Te, In/Sb/Te, Ga/Se/Te, Sn/Sb/Te, In/Sb/Ge, Ag/In/Sb/Te,Ge/Sn/Sb/Te, Ge/Sb/Se/Te and Te/Ge/Sb/S. In the family of Ge/Sb/Tealloys, a wide range of alloy compositions may be workable. Thecompositions can be characterized as Te_(a)Ge_(b)Sb_(100-(a-b)). Oneresearcher has described the most useful alloys as having an averageconcentration of Te in the deposited materials well below 70%, typicallybelow about 60% and ranged in general from as low as about 23% up toabout 58% Te and most preferably about 48% to 58% Te. Concentrations ofGe were above about 5% and ranged from a low of about 8% to about 30%average in the material, remaining generally below 50%. Most preferably,concentrations of Ge ranged from about 8% to about 40%. The remainder ofthe principal constituent elements in this composition was Sb. Thesepercentages are atomic percentages that total 100% of the atoms of theconstituent elements. (Ovshinsky U.S. Pat. No. 5,687,112, columns10-11.) Particular alloys evaluated by another researcher includeGe₂Sb₂Te₅, GeSb₂Te₄ and GeSb₄Te₇ (Noboru Yamada, “Potential of Ge—Sb—TePhase-Change Optical Disks for High-Data-Rate Recording”, SPIE v. 3109,pp. 28-37 (1997).) More generally, a transition metal such as chromium(Cr), iron (Fe), nickel (Ni), niobium (Nb), palladium (Pd), platinum(Pt) and mixtures or alloys thereof may be combined with Ge/Sb/Te toform a phase change alloy that has programmable resistance properties.Specific examples of memory materials that may be useful are given inOvshinsky '112 at columns 11-13, which examples are hereby incorporatedby reference.

Other materials, which may be termed “impurities” may be added tochalcogenides and other phase change materials in some embodiments tomodify conductivity, transition temperature, melting temperature, andother properties of memory elements using the additive-modifiedchalcogenides. Representative impurities used as additives forchalcogenides include nitrogen, silicon, oxygen, silicon dioxide,silicon nitride, copper, silver, gold, aluminum, aluminum oxide,tantalum, tantalum oxide, tantalum nitride, titanium and titanium oxide.See, e.g., U.S. Pat. No. 6,800,504, and U.S. Patent ApplicationPublication No. U.S. 2005/0029502.

Phase change alloys are capable of being switched between a firststructural state in which the material is in a generally amorphous solidphase, and a second structural state in which the material is in agenerally crystalline solid phase in its local order in the activechannel region of the cell. These alloys are at least bistable. The termamorphous is used to refer to a relatively less ordered structure, moredisordered than a single crystal, which has the detectablecharacteristics such as higher electrical resistivity than thecrystalline phase. The term crystalline is used to refer to a relativelymore ordered structure, more ordered than in an amorphous structure,which has detectable characteristics such as lower electricalresistivity than the amorphous phase. Typically, phase change materialsmay be electrically switched between different detectable states oflocal order across the spectrum between completely amorphous andcompletely crystalline states. Other material characteristics affectedby the change between amorphous and crystalline phases include atomicorder, free electron density and activation energy. The material may beswitched either into different solid phases or into mixtures of two ormore solid phases, providing a gray scale between completely amorphousand completely crystalline states. The electrical properties in thematerial may vary accordingly.

Phase change alloys can be changed from one phase state to another byapplication of electrical pulses. It has been observed that a shorter,higher amplitude pulse tends to change the phase change material to agenerally amorphous state. A longer, lower amplitude pulse tends tochange the phase change material to a generally crystalline state. Theenergy in a shorter, higher amplitude pulse is high enough to allow forbonds of the crystalline structure to be broken and short enough toprevent the atoms from realigning into a crystalline state. Appropriateprofiles for pulses can be determined, without undue experimentation,specifically adapted to a particular phase change alloy. In followingsections of the disclosure, the phase change material is referred to asGST, and it will be understood that other types of phase changematerials can be used. A material useful for implementation of a PCRAMdescribed herein is Ge₂Sb₂Te₅.

Other programmable resistance memory materials may be used in otherembodiments of the invention, including other materials that usedifferent crystal phase changes to determine resistance, or other memorymaterials that use an electrical pulse to change the resistance state.Examples include materials for use in resistance random access memory(RRAM) such as metal-oxides including tungsten-oxide (WO_(x)), NiO,Nb₂O₅, CuO₂, Ta₂O₅, Al₂O₃, CoO, Fe₂O₃, HfO₂, TiO₂, SrTiO₃, SrZrO₃,(BaSr)TiO₃. Additional examples include materials for use inmagnetoresistance random access memory (MRAM) such asspin-torque-transfer (STT) MRAM, for example at least one of CoFeB, Fe,Co, Ni, Gd, Dy, CoFe, NiFe, MnAs, MnBi, MnSb, CrO₂, MnOFe₂O₃, FeOFe₂O₅,NiOFe₂O₃, MgOFe₂, EuO, and Y₃Fe₅O₁₂. See, e.g., U.S. Patent ApplicationPublication No. 2007/0176251, titled “Magnetic Memory Device and Methodof Fabricating the Same”, which is incorporated by reference herein.Additional examples include solid electrolyte materials used forprogrammable-metallization-cell (PMC) memory, or nano-ionic memory, suchas silver-doped germanium sulfide electrolytes and copper-dopedgermanium sulfide electrolytes. See, e.g., N. E. Gilbert et al., “Amacro model of programmable metallization cell devices,” Solid-StateElectronics 49 (2005) 1813-1819, which is incorporated by referenceherein.

FIGS. 2A, 2B, and 3-12 illustrate stages in fabrication of an array ofprogrammable memory cells according to an embodiment.

FIG. 2A shows in a diagrammatic plan view a portion 20 of an array ofbottom electrodes 22 exposed at the surface of a dielectric support 24.FIG. 2B shows a segment 21 of such an array, demarcated by broken lines2B in FIG. 2A. The segment 21 includes six rows of two bottomelectrodes, and two columns of six bottom electrodes. As will beappreciated, the bottom electrodes 22 are electrically coupled to accessdevices formed in the underlying substrate (not shown in these FIGs.);the access devices coupled to the bottom electrodes in each row arecoupled to a word line, and (as described further below) the memorycells in each column are couples to a bit line. Suitable materials forthe bottom electrodes 22 include conductive materials such as a metal ormetal-based material or a non-metal material, such as, e.g.: copper;aluminum; titanium (Ti) and titanium-based materials such as titaniumnitride (TiN), titanium ox nitride (TON); tantalum (Ta) andtantalum-based materials such as tantalum nitride (TaN); polysilicon,tungsten-based materials such as tungsten silicide (WSi_(x)); and, for alow thermal conductivity electrode, materials such as LNO (LaNiO3) andLSMO (LaSrMnO₃). Suitable materials for the dielectric support 24include, for example, materials employed as intermetallic dielectrics,and include oxides (such as, e.g., silicon dioxide). The upper surfaceof the bottom electrode array is planarized, for example by a CMPtechnique. The bottom electrodes may have a thickness, for example, in arange about 1 nm to about 100 nm, more usually about 10 nm to about 50nm, and in particular examples about 20 nm.

FIG. 3 shows a dielectric support layer 30 formed over the surface ofthe bottom electrode array. Suitable materials for the dielectricsupport layer include, for example, oxides (e.g., silicon oxides, suchas SiO₂) and nitrides (e.g., silicon nitrides, such as SiN); low-Kdielectric materials (such as a doped SiO₂, for example) may bepreferred; and materials having low thermal conductivity may bepreferred. The dielectric support layer can be formed by, for example, aphysical vapor deposition (PVD) process, or a chemical vapor deposition(CVD) process. The thickness of the dielectric support layer as measuredbetween from the upper surface to the underlying bottom electrode arraysurface is related to the eventual height of the L-shaped memorymaterial element, as described further below.

Thereafter cavities are formed in the dielectric support layer. Thecavities expose areas of the underlying bottom electrode array, anddefine dielectric support structures having sidewalls. In the exampleshown in FIG. 4, the cavities are trenches 41 running parallel to theword lines in the access circuitry beneath the bottom electrode array.The dielectric support structures 40 defined by the trenches 41 havegenerally vertical sidewalls 44. The trenches are arranged so thatregions 42 of bottom electrodes 22 are exposed adjacent the sidewalls44; and, in the example shown, the trenches are arranged and dimensionedso that regions 42 of bottom electrodes 22 are exposed adjacent thesidewalls 44 along both sides of each trench.

The cavities are formed by, for example, a patterned etch such as aphotolithography technique, or a reactive ion etch (RIE) technique.Where RIE is employed, it may be followed by a cleaning process. Asuitable technique results in substantially planar, approximatelyvertical sidewalls, and may be carried out in two or more steps.

Thereafter a film of the memory material is formed over the uppersurfaces and sidewalls of the dielectric support structures, and overthe exposed areas of the bottom electrode array surface. A resultingstructure is shown in FIG. 5, in which the memory material filmconformally covers, at 50, the upper surfaces and, at 54, the sidewalls,of the dielectric support structures 40; and conformally covers, at 51,the exposed areas of the bottom electrode array. As a result the memorymaterial film contacts the exposed regions 42 of the bottom electrodes22.

In the example shown, a chalcogenide material is employed. Thechalcogenide material film may be formed by vapor deposition, such asphysical vapor deposition (PVD) or chemical vapor deposition (CVD), forexample.

An example of a method for forming a chalcogenide material film uses aPVD-sputtering or magnetron-sputtering method with source gas(es) of Ar,N₂, and/or He, etc. at the pressure in the range 1 mTorr˜100 mTorr. Thedeposition is usually done at room temperature. A collimator with anaspect ratio of 1˜5 can be used to improve the fill-in performance. Toimprove conformity with the surfaces, a DC bias of several tens of voltsto several hundreds of volts may also be used. On the other hand, thecombination of DC bias and the collimater can be used simultaneously.

Another example of a method for forming a chalcogenide material filmuses CVD such as that disclosed in U.S. Patent Application PublicationNo. 2006/0172067, titled “Chemical Vapor Deposition of ChalcogenideMaterials”, which is incorporated by reference herein.

A post-deposition annealing treatment in a vacuum or in an N₂ ambient isoptionally performed to improve the crystalline state of chalcogenidematerial. The annealing temperature typically ranges from 100° C. to400° C. with an anneal time of less than 30 minutes.

The memory material film can be formed to a thickness in a range about 1nm to about 50 nm, more usually about 5 nm to about 15 nm, and inparticular examples about 8 nm. With reference to FIGS. 1B and 1D, thethickness of the memory film at 54, on the sidewalls, establishes theeventual thickness (t_(mv)) of the fin-shaped upright portion 17 of thememory material element; and the thickness of the memory film at 51,overlying the exposed areas 42 of the surfaces of the bottom electrodes22, establishes the eventual thickness (t_(mh)) of the base portion 15of the memory material element. As will be appreciated, because thememory film conforms to the substantially planar sidewalls of thedielectric support structures, the fin-shaped upright portion of thememory material element is also substantially planar, and may bereferred to as planar herein.

After formation of the memory material film, a dielectric sidewallspacer layer is formed over the memory material film. A resultingstructure is shown in FIG. 6, in which the dielectric sidewall spacerlayer 60 covers the memory material film. Suitable materials for thedielectric sidewall spacer layer include, for example, a layer of oxidesuch as a silicon oxide (e.g., SiO₂), or a nitride such as a siliconnitride (e.g., SiN); low-K dielectric materials (such as a doped SiO₂,for example) may be preferred. Preferred materials react only to a lowextent or do not react with the memory material film; and preferredmaterials adhere well to the memory material film. Where the film is aGST-type phase change memory material, for example, a preferred sidewallspacer material may be SiN. The dielectric sidewall spacer layer can beformed by, for example, a vapor deposition process such as a chemicalvapor deposition (CVD), or an atomic layer chemical vapor deposition(ALCVD), or an atomic layer deposition (ALD). The dielectric sidewallspacer layer can be formed to a thickness in a range about 1 nm to about100 nm, more usually about 5 nm to about 30 nm, and in particularexamples about 15 nm.

Thereafter dielectric sidewall spacers are formed, and a memory materialstructure is formed having generally horizontal portions underlying thedielectric sidewall spacers (that is, between the dielectric sidewallspacers and the electrode array surface), and generally verticalportions between the dielectric sidewall spacers and the sidewalls ofthe dielectric support structures. Stated another way, the resultingmemory material structure is L-shaped in a sectional view takengenerally across the trenches.

The dielectric sidewall spacers are formed by anisotropically etchingthe dielectric sidewall spacer 60 down to the memory material film.Suitable anisotropic etch techniques for formation of dielectricsidewall spacers include, for example, a directional plasma etch, forexample a reactive ion etch (RIE). A resulting structure is shown inFIG. 7, showing dielectric sidewall spacers 74 in the inner anglesdefined at the intersection of the memory material film 54 on thesidewalls 44 of the dielectric support structures 40 and the memorymaterial film 51 on the exposed areas of the bottom electrode array. Thedielectric sidewall spacer has a width (w_(ss)) at the bottom electrodearray. The width (w_(ss)) depends upon, among other factors, thethickness of the dielectric sidewall spacer layer; additionally, thewidth of the dielectric sidewall spacers can be controlled by selectingetch parameters (power, pressure, reaction chemistry) according to theparticular material being etched.

It may be preferred to minimize the width of the generally horizontalportions 85 of the memory material structures, as the feature ofimportance to the performance of the device is the upright portion 87.

The anisotropic etch of the dielectric sidewall spacer layer 60 exposesareas of the memory material film at 50, the upper surfaces of thedielectric support structures 40, and at 71 over areas of the bottomelectrode array surface not overlain by the sidewall spacers 74. Thisanisotropic etch may be continued through the exposed areas of thememory film; or, the exposed areas of the memory material film may beremoved by a subsequent etching step. Where the memory material is aGST-type phase change material, for example, it may be preferred toavoid use of Chlorine-based etch chemistry for removal of exposed areasof the memory material film.

A resulting structure is shown in FIG. 8. As noted above, at this stagewhat remain of the memory material film are memory material structureshaving generally horizontal portions 85 underlying the dielectricsidewall spacers and generally vertical portions 87 between thedielectric sidewall spacers and the sidewalls of the dielectric supportstructures. The height (h_(ms)) of the vertical portions 87 at thisstage is approximately equal to the height of the dielectric supportstructures 40; and the width (w_(ms)) of the generally horizontalportions 85 at this stage is approximately equal to the widths (w_(ss))of the dielectric sidewall spacers 74.

Thereafter a dielectric fill is formed in the trenches and over thestructure of FIG. 8, as shown at 90 is FIG.9. Suitable materials for thedielectric fill include, for example, oxides such as silicon oxides, ornitrides such as silicon nitrides; low-K dielectrics may be preferredThe dielectric fill can be formed by, for example, deposition of asuitable fill material.

Thereafter the structure of FIG. 9 is planarized by, for example CMP, toform a structure as shown in FIG. 10. The height of the features in theresulting planarized structure (including dielectric support structures144, dielectric fills 100, dielectric sidewall spacers 104, and thevertical portions 117 of the memory material structures 115, 117) may asa result of the polish be less than the height (h_(ms)) of thedielectric support structures 40 prior to planarization. Planarizationexposes upper surfaces of the dielectric support structures 144, of thedielectric fills 100, truncated upper edges of the dielectric sidewallspacers 104, and surfaces 107 of the upper ends of the vertical portions117 of the memory material structures. The planarization has no effecton the width (w_(ms)) of the generally horizontal portions 115 of thememory material structures.

Because the surfaces 107 of the upper ends of the vertical portions 117of the memory material structures are formed as a result ofplanarization of the filled structure of FIG. 9, the contact surfaces107 are generally planar, and lie in a plane generally parallel to theplane of the bottom electrodes, and transverse to the vertical portions117 of the L-shaped memory material structures.

Thereafter a top electrode material layer is formed over the planarizedsurface of the structure of FIG. 10, as shown at 110 in FIG. 11.Suitable materials for the top electrode layer include conductivematerials such as a metal or metal-based material or a non-metalmaterial, such as, e.g.: copper; aluminum; titanium (Ti) andtitanium-based materials such as titanium nitride (TiN), titanium oxnitride (TON); tantalum (Ta) and tantalum-based materials such astantalum nitride (TaN); polysilicon, tungsten-based materials such astungsten silicide (WSi_(x)); and, for a low thermal conductivityelectrode, materials such as LNO (LaNiO3) and LSMO (LaSrMnO₃). The topelectrode layer may be formed by any of a variety of techniques suitedto the particular material. Such techniques include, by way of example,sputtering and plating and CVD.

Thereafter the top electrode material is patterned to form topelectrodes over the memory cells. The top electrodes may be patterned toform islands; or, as in the example shown in FIG. 12, they may be formedas straplines or bitlines 114, generally perpendicular to the underlyingword lines. The top electrode may have a thickness, for example, in arange about 200 Å to about 5000 Å, usually about 2000 Å. The patternedtop electrodes contact the upper surfaces 107 (see, e.g., FIG. 10) ofthe memory material structures 115, 117, establishing a current pathrunning through the fin-shaped memory material element between the lowerand upper electrodes.

Additionally, trenches, e.g., trench 120, are formed perpendicular tothe underlying word lines and between the top electrodes to separate thecolumns of memory cells. The trench is formed to a depth sufficient tocut through the memory material structures, resulting in separatecolumns of individual memory material elements. The trench may stop atthe bottom electrode layer; or, as shown in FIG. 12, the trench may gothrough the bottom electrode layer as well. In any event the trench mustnot pass through the underlying word lines.

The top electrodes may be patterned by, for example, an etch (by, forexample, a photolithography technique) prior to forming the trenches. Orwhere, as here, the top electrodes are formed as straplines or bitlines,the top electrodes may be patterned as part of the trench formation.Where the top electrodes are patterned as part of the trench formation(using the same mask), the top electrodes are self-aligned with thememory material structures.

Suitable techniques for forming the trench include, for example, adirectional etch such as, for example an RIE. The RIE may be controlledby selection of process parameters; employing lower pressure and highersubstrate bias may provide better control of the shape and dimensions ofthe trench. A double-patterning or manifold patterning lithographictechnique may be employed; examples of such techniques are outlined inPing Xie et al. (2009) “Analysis of higher-order pitch division forsub-32 nm lithography”, Proc. of SPIE, Vol. 7274, pp. 72741Y-1 through72741Y-8.

Alternatively, a layer of a memory material may be interposed betweenthe planarized surface of the structure of FIG. 10 and the top electrodelayer, as illustrated for example in FIGS. 13-15. prior to forming theupper electrode layer, a layer 130 of a memory material is formed overthe surface of the structure of FIG. 10. The memory material of layer130 may be any of the variety of memory materials outlined above. Thememory material of layer 130 may the same materials as, or the same typeof material as, the memory material of the memory material structures115, 117. Thereafter, a top electrode material layer 140 is formed asdescribed above over the memory material layer 130, as shown in FIG. 14.

Thereafter the top electrode material is patterned to form topelectrodes over the memory cells. The top electrodes may be patterned toform islands; or, as in the example shown in FIG. 15, they may be formedas straplines or bitlines 114, generally perpendicular to the underlyingword lines. The top electrode may have a thickness, for example, in arange about 200 Å to about 5000 Å, usually about 2000 Å.

Additionally, trenches, e.g., trench 120, are formed perpendicular tothe underlying word lines and between the top electrodes and the memorymaterial layer 130 to separate the columns of memory cells. The trenchpasses through the memory material layer, resulting in lines of memorymaterial 119 underlying the top electrodes 114, as shown in FIG. 15. Thetrench is formed to a depth sufficient to cut through the memorymaterial structures, resulting in separate columns of individual memorymaterial elements. The trench may stop at the bottom electrode layer;or, as shown in FIG. 15, the trench may go through the bottom electrodelayer as well. In any event the trench must not pass through theunderlying word lines.

The top electrodes may be patterned by, for example, an etch (by, forexample, a photolithography technique) prior to forming the trenches. Orwhere, as here, the top electrodes are formed as straplines or bitlines,the top electrodes may be patterned as part of the trench formation and,as noted above, where the top electrodes are patterned as part of thetrench formation (using the same mask), the top electrodes areself-aligned with the memory material structures. Examples of suitabletechniques for patterning the top electrodes and for forming thetrenches, are outlined above.

Depending upon the selected technique for patterning the top electrodesand forming the trenches, the widths of the top electrodes may be thesame as, or greater or less than, the width of the memory elementsunderlying it. Where, for example, the top electrodes and the underlyingmemory elements are self-aligned, and where the etch is highlydirectional, the widths of the top electrodes and of the underlyingmemory elements are the same. Or, for example, the etch process may bemodified to provide a controlled degree of undercut of the underlyingmemory material, resulting in the memory elements being narrower thanthe top electrodes. Or, for example, the top electrodes may be madenarrower than the underlying memory elements, either (for example) byemploying different masks for patterning the top electrodes and formingthe trenches or (for example) by narrowing the top electrodes in asubsequent procedure.

Referring for example to FIG. 1B and to FIG. 12, where the width(w_(bl)) of the top electrode 114 is equal to or is greater than thewidth (w_(mv)) of the upright portion 17 of the underlying memoryelement, the area of contact between the upright portion 17 of thememory element and the upper electrode 14 (114) is the area of thecontact surface 18. That is, the contact area is the product of thethickness (t_(mv)) and the width (w_(mv)) of the upright portion 17 ofthe memory material element). Where, on the other hand, the width(w_(bl)) of the top electrode 114 is less than the width (w_(mv)) of theupright portion 17 of the underlying memory element, the area of contactbetween the upright portion 17 of the memory element and the upperelectrode 14 (114) is the product of the thickness (t_(mv)) of theupright portion 17 of the memory element and the width (w_(bl)) of thetop electrode 14 (114). These dimensions can be closely determined bycontrolling the parameters (etch chemistry, power, pressure, bias, etc.)of the etch process(es).

Following separation of the columns of memory elements, a dielectricfill (not shown in the FIGs.) is deposited in the trenches and over thetop electrodes.

As noted above, any of various types of access devices may be employed,as illustrated symbolically in FIGS. 16-18. Each of these FIGs. shows aportion of a column of memory cells electrically coupled to a topelectrode that constitutes a bit line. The access devices 160 in FIG. 16are diodes; the access devices 170 in FIG. 17 are field effecttransistors; the access devices 180 in FIG. 18 are bipolar junctiontransistors. Various configurations for access circuitry are known,along with methods for fabricating them, and others are contemplated.Examples include vertical silicon-based drives.

FIGS. 21A, 21B, 21C illustrate an example of access devices that maysuitably employed. FIG. 21A is a plan view of a portion of the accessdevice array, FIG. 21B is a section thru a portion of the array at B-B′in FIG. 1A, taken along a word line 2130; and FIG. 21C is a section thrua portion of the array at C-C′ in FIG. 1A, taken along a bit line 2120.

The access device array 2101 includes a single-crystalline substrate2100 comprising a well 2105 having a first conductivity type andconductive lines 2120 (2120 a, 2120 b, 2120 c, 2120 d) (which mayconstitute bit lines) within the well 2105. The conductive lines 2120extend in a first direction into out of the sectional view of FIG. 21Band are separated by dielectric trench isolation structures 2132 withinthe well 2105. The conductive lines 2120 comprise doped substratematerial having a second conductivity type opposite that of the firstconductivity type. In the illustrated example the doped substratematerial of the conductive lines 2120 comprises high doped N-type (N+)material of the substrate 2100, and the well 2105 comprises doped P-typematerial of the substrate 2100.

The field effect transistor 2115 of the access device includes a firstterminal 2122 comprising doped semiconductor material on thecorresponding conductive line 2120 b, a channel region 2123 comprisingdoped semiconductor material on the first terminal 2122, and a secondterminal 2124 comprising doped semiconductor material on the channelregion 2123.

A conductive cap 2127 comprising silicide is on the second terminal2124. The conductive cap 2127 may comprise, for example, a silicidecontaining Ti, W, Co, Ni, or Ta. The conductive cap 2127 provides a lowresistance contact between the doped semiconductor material of thesecond terminal 2126 and an electrode 22 in the overlying electrodearray (not shown in these FIGs.; see electrodes 22 in FIGS. 2A, 2B).

In the illustrated embodiment the first and second terminals 2122, 2124comprise highly doped N-type material, and the channel region 2123comprises doped P-type material.

The first and second terminals 2122, 2124, the channel region 2123, andthe conductive cap 2127 form a stack which is surrounded by a dielectric2230, the dielectric 2230 separating the channel region 2123 from thecorresponding word line 2130 b.

The word lines 2130, including word line 2130 b acting as the gate ofthe field effect transistor 2115 of the access device, extend into andout of the sectional view of FIG. 21C and comprise doped polysiliconmaterial and a silicide layer on the doped polysilicon. The stack formedby the first and second terminals 2122, 2124, the channel region 2123,and the conductive cap 2127 extends through a via in the word line 2130b to electrically couple the conductive line 2120 b to an overlyingelectrode, the via in the word line 2130 b having a sidewall surface2135 surrounding the channel region 2123.

Construction of such an access array is described, for example, in U.S.application Ser. No. 12/471,287, filed May 22, 2009.

The memory cell array is formed over the access device array shown inFIGS. 21A, 21B, 21C. In some embodiments the conductive cap 2127 mayitself constitute the bottom electrode of the memory cell that is formedover it. Or, an overlying electrode layer (not shown in these FIGs.; seeFIGS. 2A, 2B) may be provided, including electrodes 22 formed in contactwith the conductive caps 2127 and extending through a dielectric 24 tothe memory element.

Operation of the programmable memory cell will be described by way ofexample with reference to FIGS. 1C, 1D and FIGS. 21B, 21C. In operation,a common voltage coupled to the conductive material (top electrode) 14and voltages supplied to the word line 2130 b and the conductive (bit)line 2120 b can induce current to flow from the conductive line 2120 bto the conductive material 14, or vice versa, by way of the firstterminal 2122, channel region 2123, second terminal 2124, conductive cap2127, bottom electrode 12, memory material element 15, 17 and memorymaterial layer 19.

FIGS. 22A, 22B illustrate another example of access devices that maysuitably employed. FIG. 22A is a section thru a portion of the array,taken perpendicular to a bit line 2320; and FIG. 22B is a section thru aportion of the array, taken along a bit line 2320.

The access device array 2301 includes a single-crystalline substrate2300 comprising a well 2305 having a first conductivity type andconductive lines 2320 (2320 a, 2320 b, 2320 c, 2320 d) (which mayconstitute bit lines) within the well 2305. The conductive lines 2320extend in a first direction into out of the sectional view of FIG. 22Aand are separated by dielectric trench isolation structures 2332 withinthe well 2305. The conductive lines 2320 comprise doped substratematerial having a second conductivity type opposite that of the firstconductivity type. In the illustrated example the doped substratematerial of the conductive lines 2320 comprises high doped N-type (N+)material of the substrate 2300, and the well 2305 comprises doped P-typematerial of the substrate 2300. Access devices 2315 extend upwardly fromthe corresponding conductive lines, within vias surrounded by dielectricfill material 2330. Each access device 2315 includes, successively fromthe conductive lines 2320 upward, a lightly doped layer of N material(the N− layer) 2322, a layer of heavily doped P material (the P+ layer)2323, and a conductive cap 2327.

Construction of such an access array is described, for example, in U.S.application Ser. No. 12/060,075, filed Mar. 31, 2008, published Oct. 1,2009 at US-2009-0242865-A1.

The memory cell array is formed over the access device array shown inFIGS. 22A, 22B. In some embodiments the conductive cap 2327 may itselfconstitute the bottom electrode of the memory cell that is formed overit. Or, an overlying electrode layer (not shown in these FIGs.; seeFIGS. 2A, 2B) may be provided, including electrodes 22 formed in contactwith the conductive caps 2327 and extending through a dielectric 24 tothe memory element.

It will be noted that in the example shown in FIGS. 21A, 21B, 21C thestructure defines a transistor; and in FIGS. 22A, 22B the N− and P+layers define a diode. In the examples of each type the structure isconstructed vertically, and can be fabricated to a high device density.

It will be noted that the drawings depict a portion of an array, showingfour adjacent elements in a row or column of a 4×4 portion of an array.The various elements are shown without the components required toconnect them to other circuitry within or without the semiconductor chipin which they are embedded. Those in the art will understand that thearray may be scaled up to several billion elements or more.

The active region of the memory element, in which the memory material isinduced to change between at least two solid phases, is located withinthe upright portion 17. As can be appreciated, the active region can bemade extremely small in the illustrated structure, thus reducing themagnitude of current needed to induce a phase change. The thicknesst_(mv) of the memory material 17 can be established using thin filmdeposition techniques, as described above. Moreover, because the widthw_(mv) of the memory material fin 17 is formed using the same mask as isused to pattern the top electrode (that is, the top electrode and thememory material fin width are “self-aligned”), the width w_(mv) can bemade less than that of the top electrode 14, and preferably less than aminimum feature size for a process, typically a lithographic process,used to form the top electrodes. With reference again to FIGS. 1C, 1D,the resulting memory material fin 17 has a thin and narrowcross-sectional area, and a correspondingly thin and narrow top surface18 contacting the memory material layer 19. The small sectional area andtop surface of the memory material fin 17 concentrates current density,thereby reducing the magnitude of the current needed to induce a phasechange in the active region. Additionally, the dielectric adjacent thefin may provide some thermal isolation to the active region, which alsohelps to reduce the amount of current necessary to induce a phasechange.

Other embodiments are within the claims.

We claim:
 1. A method for making a memory cell, comprising: forming adielectric support layer over a bottom electrode, the dielectric supportlayer having an upper surface; forming a cavity through the dielectricsupport layer; exposing a surface of the bottom electrode and defining adielectric support structure having a sidewall; forming a film of memorymaterial over the dielectric support structure and in the cavity;depositing a dielectric spacer layer over the memory material film;forming a dielectric sidewall spacer from the dielectric spacer layerand a memory material structure having a generally horizontal portionunderlying the dielectric sidewall spacer and a generally verticalportion between the dielectric sidewall spacer and the sidewall of thedielectric support structure; forming a dielectric fill; planarizing thedielectric fill to expose upper ends of the vertical portion of thememory material structure; forming a memory material layer over theplanarized dielectric fill; depositing a top electrode material over thememory material layer; and forming a top electrode from the topelectrode material and a memory material element from the memorymaterial structure.
 2. The method of claim 1 wherein forming thedielectric support layer comprises depositing a layer of a dielectricmaterial.
 3. The method of claim 1 wherein forming the memory materialfilm comprises forming a film of a phase change material.
 4. The methodof claim 1 wherein depositing the dielectric spacer layer comprisesdepositing a layer of a dielectric material.
 5. The method of claim 1wherein forming the dielectric sidewall spacer and forming the memorymaterial structure are carried out in stages.
 6. The method of claim 1wherein forming the dielectric sidewall spacer comprises anisotropicallyetching the dielectric spacer layer.
 7. The method of claim 1 whereinforming the memory material structure comprises etching portions of thememory material film not covered by the dielectric sidewall spacer. 8.The method of claim 1 wherein forming the dielectric fill comprisesdepositing a dielectric material.
 9. The method of claim 1 whereinforming the top electrode and forming the memory material elementinclude one or more patterned etches.
 10. The method of claim 1 whereinforming the top electrode and forming the memory material elementinclude one or more patterned etches, employing the same mask.
 11. Amethod for fabricating a memory array having an array of memory cells,comprising: providing an array of bottom electrodes electrically coupledto an array of access devices, the access devices being electricallycoupled to word lines; forming a dielectric support layer over the arrayof bottom electrodes, the dielectric support layer having an uppersurface; forming a cavity through the dielectric support layer, defininga dielectric support structure having a sidewall and exposing surfacesof bottom electrodes adjacent the sidewall; forming a film of memorymaterial over the dielectric support structure and in the cavity;depositing a dielectric spacer layer over the memory material film;forming a dielectric sidewall spacer from the dielectric spacer layerand a memory material structure having a generally horizontal portionunderlying the dielectric sidewall spacer and a generally verticalportion between the dielectric sidewall spacer and the sidewall of thedielectric support structure; forming a dielectric fill; planarizing thedielectric fill and the underlying surface to expose upper ends of thevertical portion of the memory material structure; forming a memorymaterial layer over the planarized dielectric fill; depositing a topelectrode material over the memory material layer; and forming topelectrodes from the top electrode material and memory material elementsfrom the memory material structure.